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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB50N06EL/D Advance Information TMOS E-FET.TM Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS TM) N-Channel Enhancement-Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic gate-to-source voltage of 5 volt and 4 volt. * Silicon Gate for Fast Switching Speeds * Low RDS(on) -- 0.028 max * Replace External Zener Transient Suppressor -- Absorbs High Energy in the Avalanche Mode * Specially Designed Leadframe for Maximum Power Dissipation * Available in 24 mm 13-inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number MTB50N06EL Motorola Preferred Device TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM (R) D G S CASE 418B-02, Style 2 D2PAK MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) Symbol VDSS VDGR VGS ID ID IDM PD Value 60 60 15 50 28 142 125 1.0 2.5 - 55 to 150 400 1.0 62.5 50 260 Unit Vdc Vdc Vdc Adc Apk Watts W/C Watts C mJ C/W Total Power Dissipation Derate above 25C Total Power Dissipation @ TA = 25C, when mounted with the minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 25 Vdc, VGS = 5.0 Vpk, IL = 50 Apk, L = 0.32 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient, when mounted with the minimum recommended pad size Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds TJ, Tstg EAS RJC RJA RJA TL C This document contains information on a new product. Specifications and information herein are subject to change without notice. E-FET, Designer's and L2TMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1994 1 MTB50N06EL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0) (VDS = 60 Vdc, VGS = 0, TJ = 125C) Gate-Body Leakage Current (VGS = 15 Vdc, VDS = 0) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Temperature Coefficient (Negative) Static Drain-Source On-Resistance (VGS = 5.0 Vdc, ID = 25 Adc) (VGS = 4.0 Vdc, ID = 25 Adc) Drain-Source On-Voltage (VGS = 5.0 Vdc) (ID = 50 Adc) (ID = 25 Adc, TJ = 125C) Forward Transconductance (VDS = 15 Vdc, ID = 25 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 50 Adc, VGS = 5.0 Vdc) (VDD = 25 Vdc, ID = 50 Adc, VGS = 5.0 Vdc, RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 50 Adc, VGS = 0) (IS = 50 Adc, VGS = 0, TJ = C) (IS = 50 Adc, VGS = 0 , dIS/dt = 100 A/s) VSD -- -- trr -- 1.52 1.1 200 2.5 -- -- ns Vdc -- -- -- -- -- -- -- -- 21 365 55 150 52 13 34 27 42 730 110 300 73 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Ciss Coss Crss -- -- -- 3100 1065 260 4340 1491 520 pF VGS(th) 1.0 -- RDS(on) -- -- -- 4.78 -- -- 2.0 -- 0.028 0.039 Vdc mV/C Ohm V(BR)DSS 60 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- 64 -- -- Vdc mV/C Adc Symbol Min Typ Max Unit VDS(on) -- -- gFS 17 -- -- -- 1.68 1.40 -- Vdc mhos Reverse Recovery Time INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the tab to center of die) Ld Ls -- -- 3.5 7.5 -- -- nH nH Internal Source Inductance (Measured from the source lead 0.1 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MTB50N06EL PACKAGE DIMENSIONS C E B 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A S 1 2 3 STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN DIM A B C D E G H J K S V -TSEATING PLANE K G H D 3 PL 0.13 (0.005) M J T CASE 418B-02 ISSUE B Motorola TMOS Power MOSFET Transistor Device Data 3 MTB50N06EL Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 Motorola TMOS Power MOSFET Transistor Device Data MTB50N06EL/D *MTB50N06EL/D* |
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